1/4 rev. c structure silicon monolithic integrated circuit type positive and negative variable linear regulator product series ? features 1. built-in positive (reg1) and negative (reg2) linear regulator for ccds/ variable output/ low dropout voltage type. 2. built-in discharge circuit. negative output voltage (reg2) turns off immediately, after stb turns off. absolute maximum ratings (ta=25) parameter symbol limit unit positive supply voltage vcc +18 1 v negative supply voltage vee -18 1 v power dissipation pd 470 2 mw operating temperature range topr -40+85 storage temperature range tstg -55+125 maximum junction temperature tjmax 125 1 not to exceed pd. 2 reduced by 4.7mw/ over ta=25 ,when mount on a glass epoxy board:70mm70mm1.6mm? operating conditions parameter symbol min max unit positive supply voltage vcc +6.0 +18.0 v negative supply voltage vee -14.0 -6.0 v reg1 output voltage vo1 vctl1 *1 +16.0 v reg2 output voltage vo2 -8.5 vctl2 *2 v output current 1 io1 25 ma output current 2 io2 50 ma *1 reg1,ctl1 short *2 reg2,ctl2 short vdropout(reg1) io(reg1) + vdropout(reg2) io(reg2) not to exceed pd=470mw. note) the product described in this specification is a strategic product (and/or service) subject to cocom regulations. it should not be exported without authorization from the appropriate government.
2/4 rev. c electrical characteristics(unless otherwise specified, ta=25, vcc=16.5v, vee=-10v, set reg1=15v, set reg2=-7.5v) parameter symbol limits unit conditions min typ max bias current bias current (vcc) icc 500 850 a io1=0ma bias current (vee) iee 200 300 a io2=0ma stb stb off voltage stboff 0 0.6 v io1,2=0ma stb on voltage stbon 1.6 3.5 v io1,2=0ma stb off bias current (vee) ioff 0.7 1.6 2.5 ma io1,2=0ma stb on input current iin 10 30 60 a vstb=2v, io1,2=0ma discharge block discharge current idis 1.5 3.5 6.0 ma reg1 ctl1 voltage vctl1 1.379 1.400 1.421 v io1=10ma dropout voltage 1 vd1 0.25 0.35 v vcc=14.2v, io1=25ma peak output current 1 io1 25 ma load regulation 1 vload1 100 mv io1=025ma short C circuit output current 1 ishort1 50 ma vo1=0v ripple rejection 1 r.r.1 50 db f=120hz, ein=1vrms, io1=2ma temperature coefficient of output voltage 1 tcvo1 0.02 %/ io1=1ma, tj=0125 reg2 ctl2 voltage vctl1 -1.269 -1.250 -1.231 v io2=10ma dropout voltage2 vd2 0.35 0.45 v vee=-7.1v, io2=50ma peak output current2 io2 50 ma load regulation2 vload2 100 mv io2=050ma short C circuit output current 2 ishort2 120 ma vo2=0v ripple rejection2 r.r.2 50 db f=120hz, ein=1vrms, io2=2ma temperature coefficient of output voltage 2 tcvo2 0.02 %/ io2=1ma, tj=0125 discharge time t=(reg2co)/idis [s] (vee=-10v) co:reg2 out put capacitor(f) this product is not designed for protection against radio active rays. physical dimensions?marking msop-8 (unitmm) lot no. 3 1 9 6 d part no.
3/4 rev. c block diagram pin no.?pin name refer to the technical note about the details of the application. operating notes 1) absolute maximum ratings use of the ic in excess of absolute maximum ratings such as the applied voltage or operating temperature range may result in ic damage. assumptions should not be made regarding the state of the ic (short mode or open mode) when such damage is suffered. a physical safety measure such as a fuse should be implemented when use of the ic in a special mode where the absolute maximum ratings may be exceeded is anticipated. 2) vee potential ensure a minimum vee pin potential in all operating conditions. 3) thermal design use a thermal design that allows for a sufficient margin in light of the power dissipation (pd) in actual operating conditions. 4) pin short and mistake mounting use caution when orienting and positioning the ic for mounting on printed circuit boards. improper mounting may result in damage to the ic. shorts between output pins and the power supply and gnd pins caused by the presence of a foreign object may result in damage to the ic. ensure a minimum gnd pin potential in all operating conditions. 5) actions in strong magnetic field keep in mind that the ic may malfunction in strong magnetic fields. 6) testing on application boards when testing the ic on an application board, connecting a capacitor to a pin with low impedance subjects the ic to stress. always discharge capacitors after each process or step. always turn the ic's power supply off before connecting it to or removing it from a jig or fixture during the inspection process. ground the ic during assembly steps as an antistatic measure, and use similar caution when transporting or storing the ic. 7) this monolithic ic contains p+ isolation and p substrate layers between adjacent elements in order to keep them isolated. p/n junctions are formed at the intersection of these p layers with the n layers of other elements to create a variety of parasitic elements. for example, when the resistors and transistors are connected to the pins as shown in the following figure, ? the p/n junction functions as a parasitic diode when vee > pin a for the resistor or vee > pin b for the transistor(npn). ? similarly, when vee > pin b for the transistor (npn), the parasitic diode described above combines with the n layer of other adjacent elements to operate as a parasitic npn transistor. pin no. pin name 1 reg1 2 vcc 3 reg2 4 vee 5 ctl2 6 stb 7 gnd 8 ctl1 vcc tsd bandgap gnd stb vee vcc reg2 + - - + reg1 ctl1 ctl2 discharg e block ocp 1 2 3 4 5 6 7 8 vee
4/4 rev. c the formation of parasitic elements as a result of the relationships of the potentials of different pins is an inevitable result of the ic's architecture. the operation of parasitic elements can cause interference with circuit operation as well as ic malfunction and damage. for these reasons, it is necessary to use caution so that the ic is not used in a way that will trigger the operation of parasitic elements, such as by the application of voltages lower than the vee (p substrate) voltage to input pins. keep in mind that the ic may malfunction in strong magnetic fields. 8) ground patterns when using both small signal and large current gnd patterns, it is recommended to isolate the two ground patterns, placing a single ground point at the application's reference point so that the pattern wiring resistance and voltage variations caused by large currents do not cause variations in the small signal ground voltage. be careful not to change the gnd wiring pattern of any external parts, either. 9) applications or inspection processes where the potentials of the vcc pin and other pins may be reversed from their normal states may cause damage to the ic's internal circuitry or elements. use an output pin capacitance of 1,000f or lower in case vcc is shorted with the gnd pin while the external capacitor is charged. it is recommended to insert a diode for preventing back current flow in series with vcc or bypass diodes between vcc and each pin. 10) thermal shutdown circuit (tsd) this ic incorporates a built-in tsd circuit for the protection from thermal destruction. the ic should be used within the specified power dissipation range. however, in the event that the ic continues to be operated in excess of its power dissipation limits, the attendant rise in the junction temperature (tj) will trigger the tsd circuit to turn off all output power elements. the circuit automatically resets once the junction temperature (tj) drops. operation of the tsd circuit presumes that the ic's absolute maximum ratings have been exceeded. application designs should never make use of the tsd circuit. 11) overcurrent protection circuit (ocp) the ic incorporates a built-in overcurrent protection circuit that operates according to the output current capacity. this circuit serves to protect the ic from damage when the load is shorted. the protection circuit is designed to limit current flow by not latching in the event of a large and instantaneous current flow originating from a large capacitor or other component. this protection circuits is effective in preventing damage due to sudden and unexpected accidents. however, the ic should not be used in applications characterized by the continuous operation or transitioning of the protection circuits. at the time of thermal designing, keep in mind that the current capacity has negative characteristics to temperatures. vcc bypass diode back current prevention diode pin parasitic elements (pin a) parasitic elements or transistors (pin b) vee c b e resistor parasitic elements (pin a) vee n p n n p+ p+ p parasitic elements or transistors p substrate vee n p n n p+ p+ (pin b) c b e transistor (npn) n
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